Silicon Carbide ọkụ tube

Semixlab na-enye usoro tube ọkụ SiC dị ọcha dị elu, ihe ngwọta ọkụ ọkụ nke semiconductor na 99.9999% mkpuchi mkpuchi na nnyefe ahịrị zuru oke.

Isi uru atụmatụ

Nye ebe ikuku ikuku na-adịghị mma maka nrụpụta wafer: 99.9% SiC dị ọcha nke mkpụrụ + 99.9999% ịdị ọcha nke mkpuchi CVD, jikọtara ya na SiC cantilever paddle & wafer boat system, iji nweta mmetọ ọla efu na ụlọ usoro.

Aha dị iche iche maka ngwaahịa:

Igwe ọkụ SiC dị elu; tube silicon carbide; SiC tube dị ọcha; Silicon carbide tube maka ọkụ mgbasa; Silicon carbide tube maka mgbasa & usoro LPCVD; SiC tube maka RTP, SiC tube maka oxidation

Nkọwapụta isi:

Ihe dị ọcha: Ihe ndabere bụ silicon carbide nwere ịdị ọcha karịrị 99.9%, ịdị ọcha mgbe mkpuchi CVD gafere 99.9999% (6N ọkwa).

Thermal arụmọrụ: Oke arụ ọrụ okpomọkụ 1650 ℃ (ogologo oge), ọnụọgụ nke thermal mgbasa: 4.6 × 10⁻⁶ / ℃, uniformity na mgbe niile okpomọkụ mpaghara: ± 1.5 ℃ (1200 ℃);

Mechanical ike: ekwe ike 450Mpa (na ụlọ okpomọkụ).

Isi ojiji

Onye na-ebu ebe okpomọkụ

Guzosie ike na edo okpomọkụ ubi n'ime nso nke 1200 ℃ ka 1650 ℃ (na okpomọkụ dị iche na mgbe niile okpomọkụ mpaghara bụ ≤± 1.5 ℃)

Gbaa mbọ hụ na ọnọdụ thermodynamic nke usoro dị ka mgbasa, oxidation na annealing.

Ihe mgbochi ikewapụ mmetọ

Gbochie mgbasa nke ion ígwè (dị ka Fe/Ni/Cu, wdg) site na ihe ndị dị elu dị ọcha (dị ka SiC).

Gbochie mmetọ obe n'etiti gas usoro na gburugburu mpụta.

Usoro ọwa gas

Jikwaa nke ọma ụzọ mgbaba na nkesa gas mmeghachi omume (dị ka O₂/N₂/SiH₄, wdg)

Nweta mmeghachi omume gas na-edobe n'elu wafer (dị ka uto SiO₂).

Mkpuchi fotovoltaic: Nkwado TOPCon/HJT cell PECVD usoro njem wafer.

Ihe ngosi ngwa

● Epitaxy

● Oxidation/Diffusion

● Usoro LPCVD/PECVD

● Mwepu nke III-V compound semiconductors

Ihe ngwọta maka isi ihe mgbu ụlọ ọrụ

Ihe ngwọta anyị na-edozi isi ihe mgbu nke ndị ahịa anyị:

1. Usoro mmetọ nke oke okpomọkụ: mkpuchi 6N na-egbochi ọdịda adịghị ọcha.

Ndochi nke SiC ugboro ugboro na akụrụngwa quartz na-abawanye nguzogide corrosion site na ugboro 8.

2. CTE na-agbanwe agbanwe na-emepụta maka mgbasawanye ọkụ ọkụ nke ihe ndị na-ekpo ọkụ na-ekpo ọkụ na usoro ihe niile nke SiC.

3. Ultra-polished elu ọgwụgwọ nke metal mmetọ na azụ nke wafer (Ra 0.2μm).

Isi uru nke nkọwa teknụzụ akụrụngwa:

1. SiC ọkụ tube - Isi ihe dị ọcha: 99.9% sintered silicon carbide

▶ Thermal ujo eguzogide na-akwalite site 3 ugboro (ngwa ngwa jụrụ> 1600 ℃)

Ọnụ ọgụgụ nke mgbasawanye thermal dị ala dị ka 4.6 × 10⁻⁶ / ℃

Mkpuchi Nanoscale - Ntinye CVD nke 6N-ọcha SiC dị ọcha (99.9999%)

▶ igbochi mgbasa nke ọla dịka Fe na Ni

▶ Ịdị nro dị elu Ra <0.5μm

2. SiC wafer Boat - Dakọtara na 12-inch wafers

- Multi-layer ibu-ebu imewe

▶ 100% thermal dakọtara na ọkụ tubes

Ọnụego mmetọ wafer erughị 0.01 ppb

3. Cantilever paddle system - isostatic graphite substrate + SiC mkpuchi

- Ntinye nzizi akpaaka ± 0.1mm

▶ Ndụ na-eguzogide ọgwụ> 100,000 ugboro

Mgbasa mgbasa ozi na-erughị 5μm

Ihe ngosi teknụzụ na-emebi emebi

Mgbanwe nke ịdị ọcha

Usoro nchedo ọkwa abụọ

Okpokoro isi bụ 99.9% SiC → iji wuo usoro ike dị elu

CVD-SiC-ọkwa 6N na oyi akwa arụrụ arụ na-eme akara akara atomic
ihe mgbochi

Njikwa adịghị ọcha: Na / K <0.1ppm, arọ ọla <5ppb, na-emezu ihe achọrọ nke usoro n'okpuru 28nm

Sistemu synergy uru

● Thermal ubi uniformity: Triple thermal njikọ imewe nke ọkụ tube + wafer ụgbọ mmiri + paddle agụba, okpomọkụ dị iche na mgbe niile okpomọkụ mpaghara (> 1200 ℃) bụ ≤± 1.5℃

● Lifespan okpukpu abụọ: Ihe ngwọta niile na-agbatị ndụ site na 40% ma e jiri ya tụnyere usoro ngwakọ, yana MTBA gafere awa 8,000.