Mgbanaka TaC nwere oghere

Silicon carbide (SiC), ihe semiconductor nke ọgbọ nke atọ, nwere ihe pụrụ iche dị ka bandgap dị elu, nrụpụta ọkụ dị elu, na oke ọkụ eletrik na-emebi emebi, na-eme ka ọ dị oke mkpa na mpaghara dị ka ụgbọ ala ume ọhụrụ, ụgbọ njem ụgbọ oloko, nkwukọrịta 5G, na elektrọnik ike. Uto nke otu kristal SiC chọrọ oke okpomọkụ (>2000°C) na gburugburu anụ ahụ na kemịkalụ siri ike, na-etinye ihe dị oke mkpa n'ihe ndị dị mkpa nke akụrụngwa uto, dị ka crucibles na thermal field components. Semixlab na-enye mgbanaka tantalum carbide (TaC), nwere ihe pụrụ iche nke anụ ahụ na kemịkal, abụrụla ihe dị mma maka ịkwalite usoro uto nke otu kristal SiC.

Njirimara isi nke mgbanaka tantalum carbide porous

1. Nkwụsi ike dị elu nke okpomọkụ

Ebe mgbaze Tantalum carbide ruru 3880 ℃, na silicon carbide otu kristal uto okpomọkụ (2000-2500 ℃) iji nọgide na-enwe nkwụsi ike nhazi, zere nrụrụ ma ọ bụ mgbanwe.

Ọnụego mgbasawanye ọkụ dị ala (6.3×10⁻⁶/K), na-ebelata ihe egwu nke mgbawa nke nrụgide okpomọkụ kpatara.

2. Chemical inertness

Ọ nwere ike dakọtara na silicon carbide, graphite na ihe ndị ọzọ, na ọ dịghị emeghachi omume na silicon (Si) na carbon (C) uzuoku na elu okpomọkụ iji zere mmetọ kristal.Excellent corrosion iguzogide silicon/carbon gas.

Ngwa ngwa:

1. Aha ndị ọzọ: mgbanaka TaC na-agba agba, Tantalum carbide porous, mgbanaka mkpuchi TaC

2. Ngwa: Dị ka isi akụrụngwa nke thermal ubi usoro, porous TaC mgbanaka regulates okpomọkụ radieshon nkesa site porous Ọdịdị, ebelata radial okpomọkụ gradient, na mma na axial ibu uniformity nke silicon carbide otu crystal.Combined na graphite okpomọkụ, na crystal stress ntụpọ mere site na oke okpomọkụ nwere ike belata.

3. Core parameters:Tantalum carbide melting point to 3880 ℃, na silicon carbide single crystal growth range (2000-2500 ℃) iji nọgide na-enwe nguzosi ike n'ihe, zere deformation ma ọ bụ volatilization.

Ọnụego mgbasawanye ọkụ dị ala (6.3×10⁻⁶/K), na-ebelata ihe egwu nke mgbawa nke nrụgide okpomọkụ kpatara.

Ngwa bụ isi na uto nke silicon carbide single crystal

1. Thermal ubi imewe na okpomọkụ akara

Dị ka akụkụ bụ isi nke sistemu ikuku thermal, mgbanaka TaC na-agba agba na-achịkwa nkesa ọkụ ọkụ site na nhazi ya, na-ebelata gradient okpomọkụ radial, ma na-eme ka ịdị n'otu nke kristal dị mma.

Ejikọtara ya na onye na-ekpo ọkụ graphite, enwere ike ibelata nrụrụ nrụgide kristal kpatara oke ọkụ mpaghara.

2. Ụgbọ njem gas na njikarịcha mmeghachi omume

N'ime ọkụ ọkụ PVT, enwere ike iji mgbanaka TaC nwere ike iji dị ka ihe na-ekesa gas ka ọ na-ekesa vapor Si/C n'elu mkpụrụ kristal, nke nwere ike imeziwanye ogo kristal na ogo kristal.

Ihe owuwu pore nwere ike itinye ihe adịghị ọcha (dị ka ion ọla) wee kwalite ịdị ọcha nke kristal (resistivity> 10⁵ Ω·cm).

3. Mgbakọ nkwado ogologo ndụ

Kama ihe ndị graphite ọdịnala, a na-eji ya maka mgbanaka nkwado crucible ma ọ bụ mkpuchi mkpuchi okpomọkụ iji zere nsogbu nke ntụ ntụ graphite na okpomọkụ dị elu ma gbasaa ndụ ọrụ nke akụrụngwa (> 1000 awa).

Ihe owuwu porous na-ebelata itinye uche na mgbakasị ahụ ma belata ohere nke mgbawa.

A na-ejikarị mgbanaka TaC eme ihe na usoro PVT

Na nchịkọta, Semixlab's Porous TaC Ring na-eme ka ịdịmma kristal dị mma: ogige ikpo ọkụ na-edozi ahụ na-ebelata njupụta ntụpọ ma na-akwado nkwado nke nnukwu otu kristal SiC nke 6 sentimita na karịa.

Nkwalite arụmọrụ nke usoro: Mee ngwa ngwa nnyefe gas ma bulie ọnụego uto site na 10-15%.

Belata ụgwọ ọrụ mmepụta ihe: Akụkụ ndụ ogologo oge na-ebelata ugboro ole a na-arụzi ngwá ọrụ, na ọnụ ahịa ya na-ebelata site na 20-30%.

Uru nke porous Ọdịdị

Porosity nke a na-achịkwa (30-60%) na-ebuli ụzọ mgbasa gas na-akwalite njem ụgbọ mmiri Si/C otu na PVT (usoro njem ụgbọ mmiri anụ ahụ).

Ebe dị elu dị elu na-eme ka arụmọrụ nke radieshon na-ekpo ọkụ na-eme ka ọ dịkwuo mma, na-enyere aka ịmepụta ebe okpomọkụ otu, ma na-egbochi ntụpọ kristal (dịka microtubules na dislocations).