Elu ịdị ọcha graphite obi siri ike

Eserese graphite dị ọcha dị elu, ihe bụ isi ihe ọkụkụ maka semiconductor ọgbọ nke atọ na nrụpụta fotovoltaic dị elu, bụ ngwaahịa dabara adaba nke Semixlab mepụtara dabere na ihe karịrị afọ 20 nke nyocha ihe sitere na carbon na ahụmịhe mmepe. Site na teknụzụ nkwalite ọganihu na usoro gradient gradient dị elu, ihe a na-enweta nkwụsi ike n'usoro na nkwụsi ike gburugburu ebe obibi nke ihe mmetụta dị nro ọdịnala na-enweghị ike nweta ma na-ejigide njirimara ọkụ dị mma nke graphite. The n'ichepụta usoro na-amalite na mba elu akụrụngwa, mgbe 1200 ℃ tupu carbonization na-etolite a disorderly oyi akwa Ọdịdị, na onwe-mepụtara ala ash phenolic resin bụ impregnated, na mgbagwoju ekara akụkụ na-akwadebe na 80MPa isostatic ịpị technology. N'ime ikuku echedoro argon, ahụ na-enweta awa 72 nke gradient gradient na 2800 ℃, nke na-akwalite nhazigharị nke carbon carbon iji mepụta usoro kristal nke ukwuu, na n'ikpeazụ nweta nha nha nke ± 0.05mm site na etiti CNC axis ise. Enwere ike imepụta mkpuchi gradient SiC nke nwere ọkpụrụkpụ nke 50-200μm site na ntinye mmiri kemịkalụ (CVD) iji meziwanye nguzogide oxidation.

Elu ịdị ọcha graphite isiike chere na-egosi ọmarịcha arụmọrụ zuru oke na gburugburu ebe okpomọkụ: ọdịnaya carbon ya bụ ≥99.99% na uru ash na-achịkwa nke ọma n'ime 65ppm, na-emezu ihe achọrọ nke ịdị ọcha nke semiconductor; Ọbụna na elu okpomọkụ nke 2000 ℃, ọ ka na-anọgide na-enwe a amị ikike nke ≥3MPa, ọma imeri ụlọ ọrụ nsogbu na nro chere ihe dị mfe deform na daa n'okpuru elu okpomọkụ ọnọdụ. Na-enweta izi ezi njikwa ọnọdụ okpomọkụ n'ime ọkụ SiC otu kristal, nke dị 40% dị elu karịa nkezi ụlọ ọrụ, ma na-ebelata njupụta otu kristal dị n'okpuru 500cm⁻². Mgbe 100 quenching na kpo oku cycles si 2000 ℃ ka ụlọ okpomọkụ, shrinkage ọnụego nke ihe akara bụ mgbe niile na-erughị 0.5%, na-egosi na akụkụ kwụsie ike nke omenala carbon chere bụ ihe karịrị 3 ugboro.

N'ọhịa nke ọgbọ nke atọ semiconductor n'ichepụta, ngwaahịa aghọwo isi akụrụngwa nke anụ ahụ vapor transfer (PVT) SiC crystal ibu ọkụ, ya ike Ọdịdị nwere ike idi obodo elu okpomọkụ nke 3000 ℃ na-enweghị structural creep, na na pụrụ iche SIC-Si mejupụtara mkpuchi, na ọxịdashọn na-eguzogide okpomọkụ nwere ike bulie 1800℃. Ogo oghere nke otu ọkụ kristal kwụsiri ike na 5 × 10^-3Pa ruo ogologo oge.

Data teknụzụ_Carbon/Ihe mejupụtara carbon:

1. SiC otu kristal ibu ọkụ (PVT usoro)

Dị ka isi okpomọkụ mkpuchi oyi akwa nke niile graphite crucible components, axial okpomọkụ gradient akara ziri ezi bụ ± 0.3 ℃ / mm; A na-echekwa oghere na-eto eto <5×10-3Pa; A na-ebelata njupụta njupụta otu kristal ka ọ bụrụ <500/cm².

2. Igwe ọkụ ingot nke fotovoltaic polycrystalline

Modul mkpuchi ikuku dị elu na-ebelata oriri ume site na 35% (tụnyere ngwọta mmetụta carbon ọdịnala).

3. Ọgbọ nke atọ semiconductor epitaxy akụrụngwa

Ejikọtara ya na ụlọ mmeghachi omume MOCVD iji nweta ±1℃ wafer larịị ịdị n'otu.

Kwado 8-inch GaN-on-SiC epitaxial mpempe akwụkwọ njupụta.

Ike mgbanwe okpomọkụ dị elu: dị elu karịa ọkwa ụlọ ọrụ, ruo 150MPa.

Usoro okpomọkụ: ruo ugboro 1000, dị elu karịa nkezi ụlọ ọrụ.

Nkwado maka ọrụ ahaziri n'ụzọ zuru ezu: site na ihe na-akpụzi, nke ukwuu nhazi.