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TaC Planetary Epi Susceptor
| Ebe nke Si Malite: | China |
| Ika aha: | Semixlab |
| Model Number: | TPES0001 |
| asambodo: | ISO 9001 |
| Kacha nta Order ibu: | 1pc |
| Ahịa: | ahaziri |
| Packaging Details: | Igbe mbupụ ọkọlọtọ |
| Oge Mbuga ozi: | 30-45days |
| Ịkwụ Ụgwọ Okwu: | Ka ewekorita ya |
| Tụkwasịnụ Ikike: | 200pcs kwa ọnwa |
Description
Diski mbara ala Aixtron bụ isi ihe na-ebunye ihe na akụrụngwa igwe ikuku kemịkalụ nke metal-organic (MOCVD), nke a na-ejikarị na usoro uto nke silicon carbide (SiC) epitaxial sheets. Ọdịdị ya bụ isi na-anabata ihe mejupụtara nke ihe graphite dị ọcha dị elu + mkpuchi tantalum carbide (TaC).
Ngwa ngwa:
1. Aha ndị ọzọ: Aixtron planetary disk, TaC mkpuchi mbara ala susceptor, SiC Epi susceptor maka Aixtron reactor
2. Ngwa: N'ihi na elu-arụmọrụ silicon carbide (SiC), gallium nitride (GaN) na ndị ọzọ ọgbọ nke atọ semiconductor epitaxial usoro.
3. Isi paramita:
Ihe owuwu ahụ ka kwụsiri ike na 2000 ℃ iji zere mmetọ mmetọ nke ụlọ mmeghachi omume.
Nguzogide dị mma maka mbuze nke gas ndị dị ka SiH₄ na HCl. Na-ebelata ntụpọ elu na mkpụrụ.
Igwe ọkụ ọkụ nke graphite +TaC composite Ọdịdị dị nso na nke SiC wafer (SiC: 490 W / m·K), na-ebelata mgbagha lattice nke nrụgide okpomọkụ kpatara.
Ngwunye elu nke mkpuchi TaC bụ <1μm, nke nwere ike igbochi ọdịda nke micro-particles ma hụ na ọdịdị elu nke epitaxial oyi akwa (njupụta njupụta <0.5 / cm²).
Isi okwu ahia
Diski mbara ala Aixtron bụ isi ihe na-ebunye ihe na akụrụngwa igwe ikuku kemịkalụ nke metal-organic (MOCVD), nke a na-ejikarị na usoro uto nke silicon carbide (SiC) epitaxial sheets. Ihe owuwu ya na-anabata ihe mejupụtara nke ihe graphite dị ọcha dị ọcha + mkpuchi tantalum carbide (TaC):
Graphite mkpụrụ: na-enye ọmarịcha thermal conductivity (~ 130 W / m · K) na elu okpomọkụ kwụsie ike (okpomọkụ> 2000 ℃) iji hụ na a edo thermal ubi nkesa na mmeghachi omume ụlọ.
Ihe mkpuchi Tantalum carbide: Elu graphite na-ekpuchi ya site na ntinye kemịkalụ kemịkalụ (CVD) ma ọ bụ usoro sinteed, na-abụkarị 30-100um gbara ọkpụrụkpụ, iji mepụta ihe mgbochi kemịkalụ siri ike.
The imewe na-kachasị maka elu okpomọkụ (1500-1700 ℃), ukwuu corrosive (silane, HCl na ndị ọzọ gas) gburugburu SiC epitaxial ibu, budata mma usoro kwụsie ike na wafer mkpụrụ.
Tantalum carbide (TaC) na silicon carbide (SiC) mkpuchi arụmọrụ ntụnyere
| Ihe mkpuchi mkpuchi | Tantalum carbide (TaC) mkpuchi | Ihe mkpuchi silicon carbide (SiC). |
| agbaze ebe | Ebe mgbaze 3880 ℃ (oke okpomọkụ dị elu) | Ebe mgbaze 2700 ℃ (dị mfe decompose na elu okpomọkụ) |
| Ọnụọgụ mgbasawanye okpomọkụ | Ọnụọgụ mgbasawanye okpomọkụ 6.3 × 10⁻⁶/K (dakọtara nke ọma na graphite) | 4.5×10⁻⁶/K (dị mfe ịgbawa n'ihi ndakọrịta okpomọkụ) |
| Iguzogide silicon vapo corrosion | Nnukwu iguzogide silicon vapor corrosion (obere TaC na Si reactivity) | dara ogbenye (na oke okpomọkụ SiC na-emeghachi omume na Si iji mepụta usoro gas Si₂C) |
| Ihe ize ndụ mmetọ urughuru | Ihe ize ndụ dị ntakịrị nke mmerụ ahụ (mkpuchi mkpuchi na-enweghị pores) | Elu (ihe mkpuchi na-adịkarị mfe peeling mpaghara) |
| ndụ | Ndụ ọrụ> awa 5000 (usoro nlekọta agbatịkwuru karịa 50%) | Banyere 2000-3000 awa |
ndakọrịta mmepụta
Emebere ya na Aixtron G5 WW C na ikpo okwu amụma, ọ nwere ike iburu wafers 6/8-inch nwere ikike nke> 30 wafers / ogbe.
Uru nka na uru ụlọ ọrụ
Graphite + tantalum carbide mkpuchi mbara ala susceptor na-edozi nsogbu ọkpọkọ nke mkpuchi SiC ọdịnala na usoro okpomọkụ dị ogologo oge:
Nkwalite ọnụ ahịa: ịgbatị okirikiri nnọchi nke ihe oriri ma belata ọnụ ahịa epitaxial nke otu ibe karịa 20%;
Mmụba mkpụrụ: belata mmetọ urughuru na mmetụta ntụpọ okpomọkụ, ma kwalite mkpụrụ akwụkwọ epitaxial ka ọ gafere 95%;
Usoro ịgbasawanye windo: na-akwado ọnụego uto dị elu (> 50μm / h) yana akwa epitaxial.
Ka a na-ebuli ikike SiC zuru ụwa ọnụ ruo 8 inch, teknụzụ a ga-abụ ụzọ dị oke mkpa iji mebie n'ime mkpirisi nkwụsi ike nke epitaxial.
nkọwa
| Njirimara anụ ahụ nke mkpuchi TaC | |
| njupụta | 14.3 (g/cm³) |
| Mgbapụta pụrụ iche | 0.3 |
| Ahụhụ ịgbasa ebe ikuku | 6.3 10-6/K |
| Isi ike (HK) | 2000HK |
| eguzogide | 1 × 10-5 Ohm * cm |
| Kwesie ike ikuku | <2500 ℃ |
| Mgbanwe nha eserese | -10 ~ -20 nkeji |
| Mkpuchi ọkpụrụkpụ | ≥20um ahụkarị uru (35um± 10um) |
| Omume nke na-ahụ maka ahụike | 9-22 (W/m·K) |
| Njirimara anụ ahụ nke graphite isostatic | ||
| Property | unit | Picalkpụrụ Omume |
| Nnukwu njupụta | g / cm | 1.83 |
| Ekweghị ekwe | HSD | 58 |
| Ọdụdọ Resistivity | μΩ.m | 10 |
| Ike ike | MPa | 47 |
| Ike mkpakọ | MPa | 103 |
| Ike ọdụdọ | MPa | 31 |
| Modul nke Young | GPA | 11.8 |
| Mgbasa ọkụ (CTE) | 10-6K-1 | 4.6 |
| Omume Omume nke Igwe | W·m-1·K-1 | 130 |
| Nkezi Ọka | μm | 8-10 |
ngwa
Silicon carbide ike ngwaọrụ epitaxy
Ọ dabara maka 4H-SiC homogenous epitaxial growth, nke a na-eji na-emepụta elu voltaji MOSFET na IGBT ngwaọrụ karịa 1200V.
Ọchịchọ maka ụgbọ ala ume ọhụrụ, ndị ntụgharị fotovoltaic, ụzọ ụgbọ oloko na mpaghara ndị ọzọ abawanyela.
Ọgbọ nke atọ semiconductor mmepe
Na-akwado usoro heteroepitaxy GaN-on-SiC maka ngwaọrụ 5G RF na ibe nkwurịta okwu millimita.
asọmpi Advantage
Nchịkọta isi uru:
Ihe mkpuchi TaC dị elu karịa mkpuchi SiC ọdịnala n'ihe gbasara nguzogide corrosion na oke okpomọkụ, nha nha na ogologo ndụ, ọkachasị dabara adaba maka gburugburu ebe nkwalite ikuku silicon na uto SiC epitaxial.
Iguzogide oke okpomọkụ:
Ihe owuwu ahụ ka kwụsiri ike na 2000 ℃ iji zere mmetọ mmetọ nke ụlọ mmeghachi omume.
Chemical na-eguzogide:
Nguzogide dị mma maka mbuze nke gas ndị dị ka SiH₄ na HCl. Na-ebelata ntụpọ elu na mkpụrụ.
Ịdị n'otu ebe okpomọkụ:
Igwe ọkụ ọkụ nke graphite +TaC composite Ọdịdị dị nso na nke SiC wafer (SiC: 490 W / m·K), na-ebelata mgbagha lattice nke nrụgide okpomọkụ kpatara.
Mmetọ mmetọ dị ala:
Ngwunye elu nke mkpuchi TaC bụ <1μm, nke nwere ike igbochi ọdịda nke micro-particles ma hụ na ọdịdị elu nke epitaxial oyi akwa (njupụta njupụta <0.5 / cm²).
