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CVD Tantalum Carbide (TaC) mkpuchi

CVD Tantalum Carbide (TaC) mkpuchi

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Mgbaaka mkpuchi TaC maka SiC Epitaxial Reactor
Mgbaaka mkpuchi TaC maka SiC Epitaxial Reactor

Mgbaaka mkpuchi TaC maka SiC Epitaxial Reactor


Dịka onye na-emepụta ma na-ebunye TaC Coated Rings na China, Semixlab TaC Coated Ring maka SiC Epitaxial Reactor bụ ihe na-arụ ọrụ dị elu nke e mepụtara iji kwado uto epitaxial silicon carbide kwụsiri ike, otu, na nke a na-emegharị ugboro ugboro n'okpuru ọnọdụ usoro dị oke njọ. Emebere ya maka ojiji na sistemụ epitaxy SiC dị elu, mgbanaka a na-arụ ọrụ dị mkpa n'ịkọwa ókè mmeghachi omume, ime ka ọnọdụ akụkụ wafer sie ike, na igbochi ntinye nje na gburugburu ebe jupụtara na hydrogen na chlorine. Anyị na-atụ anya ajụjụ gị.

Description

N'ime ihe nrụpụta epitaxial silicon carbide, okpomọkụ ọrụ na-agafekarị 1600 °C n'okpuru ikuku hydrogen na chlorine nke nwere oke mmebi. Arụmọrụ nke ihe ndị mejupụtara njikwa ókèala na nsọtụ na-emetụta kpọmkwem ịdị mma nke oyi akwa epitaxial, nguzozi mmepụta, na oge ọrụ akụrụngwa. A na-emepụta mgbanaka mkpuchi tantalum carbide (TaC) nke Semixlab kpọmkwem iji mezuo ihe ndị a chọrọ n'ebe mmepụta buru ibu. Mgbaaka ndị a na-arụ ọrụ dị ka ihe dị mkpa maka ihe nrụpụta epitaxial SiC, na-ahụ na usoro ogologo oge kwụsiri ike, uto epitaxial otu, na ịdị ọcha nke ihe nrụpụta.

N'ime usoro epitaxy SiC, a na-etinye mgbanaka mkpuchi tantalum carbide (TaC) n'akụkụ nsọtụ wafer ma ọ bụ na mpaghara mgbanwe reactor maka mmiri okpomọkụ na gas. Ọrụ ha bụ isi bụ ime ka ọnọdụ okpomọkụ mpaghara na omume mmeghachi omume vapor-phase dịgide na nsọtụ wafer - ebe ndị kachasị nwee ike itinye parasitic na-enweghị njikwa na enweghị otu n'akụkụ. Site n'ịkọwa kpọmkwem ókè mmeghachi omume na igbochi ntinye silicon na carbon achọghị, mgbaaka mkpuchi ndị a na-eme ka nha nha nke epitaxial na nhazi dopant dịkwuo mma maka wafer SiC buru ibu.

A họọrọ mkpuchi tantalum carbide nke Semixlab n'ihi nkwụsi ike ya dị egwu, enweghị ike kemịkalụ, na iguzogide nchara halide. Site na ebe agbaze ihe karịrị 3880 °C ma nwee ezigbo ndakọrịta na H₂, HCl, na kemịkalụ ndị ọzọ na-emebi emebi nke a na-ejikarị eme ihe na usoro epitaxy silicon carbide, TaC na-echebe ihe ndị dị n'okpuru ala nke ọma site na mbuze na mmebi nhazi. Nhazi mkpuchi a dị elu, nke nwere obere porosity na-ebelata mmepụta ihe, na-ebelata ihe egwu nke microcracks ma ọ bụ delamination, ma na-ahụ na ọnọdụ reactor kwụsiri ike n'oge usoro ọrụ agbatịkwuru.

Ma e jiri ya tụnyere ihe ngwọta silicon carbide ma ọ bụ graphite susceptor, Tantalum Carbide Coating dị elu na-eme ka ndụ akụkụ ahụ dịkwuo ogologo, si otú a na-ebelata ugboro ole a na-arụzi ya na mgbanwe usoro nke jikọtara ya na nnọchi akụkụ ahụ. Site n'echiche ọnụ ahịa mmepụta, mgbanaka mkpuchi Tantalum Carbide na-eme ka usoro ahụ dịkwuo mma ma na-eme ka ọnụ ahịa ya dịkwuo elu. Maka ahịrị mmepụta epitaxial dị elu na mmepụta ngwaọrụ ike dị elu, nkwụsi ike a na-asụgharị na mmepụta dị elu, iji akụrụngwa eme ihe nke ọma, na obere ọnụ ahịa mmepụta.

Dịka ụlọ ọrụ teknụzụ kachasị elu na ngalaba usoro epitaxial semiconductor nke China, Semixlab nwere ahụmịhe miri emi na teknụzụ mkpuchi dị elu na ihe nhazi semiconductor. A na-ekwe nkwa na a ga-emepụta ma mepụta mgbanaka mkpuchi TaC anyị maka SiC Epitaxial Reactor n'okpuru ụkpụrụ njikwa mma siri ike. Semixlab ka na-agba mbọ ịnye teknụzụ kachasị ọhụrụ na mgbanaka mkpuchi TaC ahaziri maka ngwọta Reactor SiC Epitaxial na ụlọ ọrụ semiconductor. Anyị na-atụ anya ịbụ onye mmekọ ogologo oge gị na China.

nkọwa
Njirimara anụ ahụ nke mkpuchi TaC
njupụta 14.3 (g/cm)3)
Mgbapụta pụrụ iche 0.3
Ahụhụ ịgbasa ebe ikuku 6.3*10-6/K
Isi ike (HK) 2000HK
eguzogide 1 × 10-5 Ohm*cm
Kwesie ike ikuku <2500 ℃
Mgbanwe nha eserese -10 ~ -20 nkeji
Mkpuchi ọkpụrụkpụ ≥20um ahụkarị uru (35um± 10um)
anyị Ọrụ

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