CVD SiC mkpuchi wafer susceptor

Semixlab na-elekwasị anya na mmepe na mmepụta nke mkpuchi silicon carbide (SiC) dị ọcha, ma na-agba mbọ ịnye ngwọta dị elu maka ụlọ ọrụ semiconductor. Site na teknụzụ kemịkalụ vapor deposition (CVD) dị elu, anyị na-enye ọrụ mkpuchi omenala maka ndị susceptors wafer iji hụ na arụmọrụ ha dị elu na gburugburu usoro dị oke egwu.

Anyị na-etolite mkpuchi β-SiC dị elu (crystal orientation (111)) n'elu mkpụrụ osisi graphite dị elu site na teknụzụ CVD, n'otu oge ahụ, ọ nwere nguzogide oke okpomọkụ, nguzogide corrosion na ike nkesa ọkụ edo edo. Ngwaahịa dabara adaba maka Aixtron, Veeco na akụrụngwa uto epitaxial ndị ọzọ, nke a na-ejikarị na GaN/GaAs na uto epitaxial ndị ọzọ.

A na-eme mkpụrụ nke CVD SiC mkpuchi mkpuchi nke SGL graphite dị ọcha, yana mkpuchi silicon carbide na-etolite n'otu n'otu site na usoro ikuku vapor (CVD). A na-eme usoro a n'ime ụlọ mmeghachi omume okpomọkụ dị elu ma hụ na nanoscale crystalline iguzosi ike n'ezi ihe nke mkpuchi ahụ site na ịchịkwa oke nke isi iyi silicon (dịka ọmụmaatụ, methyltrichlorosilane) na gas isi iyi carbon, gradient okpomọkụ (nke dị n'etiti 1000 ° C na 1400 ℃) na ntinye ego. Enwere ike ịhazi oke mkpuchi mkpuchi dịka ngwa chọrọ, sitere na microns ole na ole ruo iri iri nke microns, iji zute ike nrụpụta chọrọ na oke okpomọkụ, ebe ị na-ezere ihe egwu nke mgbawa nrụgide n'ihi oke oke.

N'ime uto epitaxial LED, tray wafer kwesịrị iguzogide oke okpomọkụ dị elu karịa 1600 ℃ na ịgba ígwè ọkụ ọkụ ngwa ngwa. Site na ebe mgbaze dị elu (ihe dị ka 2700 ℃), ọnụọgụ dị ala nke mgbasawanye thermal (4.5 × 10)^-6/ K) na ezigbo okpomọkụ conductivity (~ 120 W / m · K), CVD SiC mkpuchi nwere ike ịnọgide na-enwe geometric nkwụsi ike n'okpuru oké okpomọkụ mgbanwe ma na-ezere wafer warping ma ọ bụ micro-cracks kpatara site thermal nrụgide. Na mgbakwunye, kemịkalụ inertness nke SiC na-eme ka ọ gosipụta nguzogide corrosion siri ike na gas na-emebi emebi (dịka HCl, H).₂) gburugburu ebe obibi, na-ebelata nke ukwuu mmetọ adịghị ọcha ewepụtara site na mgbanwe ma ọ bụ mmeghachi omume n'akụkụ n'oge usoro ahụ, si otú ahụ na-eme ka ịdị n'otu nke oyi akwa epitaxial dị n'elu wafer na mkpụrụ ngwaọrụ.

A na-eji ngwaahịa a eme ihe n'ọgbọ nke atọ semiconductor n'ichepụta, mmepụta mgbawa LED dị elu. Dịka ọmụmaatụ, n'ime usoro ntinye mmiri nke metal-organic chemical vapor deposition (MOCVD) maka ngwaọrụ GaN-on-SiC RF, CVD SiC tray na-enweta ịdị n'otu okpomọkụ n'ime ± 1 ℃ nke elu wafer site na nhazi nkesa nkesa ọkụ nke ọma, na-ahụ na ngbanwe nke oyi akwa epitaxial bụ ihe na-erughị 1%. N'otu oge ahụ, njirimara ntọhapụ ya dị ala (njupụta nha <0.1/cm²dị ka atụpụtara SEM-EDS) na-eme ka ọ bụrụ ihe magburu onwe ya na gburugburu ụlọ dị ọcha, karịsịa maka nhazi usoro dị elu na-enwe mmetụta maka ntụpọ (dị ka usoro enyemaka maka mgbagha mgbagha n'okpuru 5 nm).

N'iji ya na trays wafer ọdịnala, enwere ike ịgbatị ndụ ọrụ CVD SiC mkpuchi wafer hy pnotic tor site na ugboro 3-5. Ngosipụta nchacha nke elu ya na-ebelata oge mmezi yana, jikọtara ya na teknụzụ mkpuchi mkpuchi mpaghara, belata nloghachi na okirikiri itinye ego karịa 40%. Dabere na data nha nke ụlọ ọrụ, ahịrị mmepụta nke 6-inch SiC epitaxial site na iji ngwaahịa a nwere ike ibelata mgbanwe usoro n'etiti batches site na 15%, mụbaa ikike mmepụta kwa afọ site na 20%, ma belata ọnụego ntupu n'ihi mmetọ na-erughị 0.03%.

Site na nyocha ụlọ nyocha na mmepe ruo na mmepụta ihe buru ibu, Semixlab's CVD SiC mkpuchi wafer hy pnotic tor bụ onye isi ụlọ ọrụ na-eche mgbe niile. Ọ bụghị naanị na a na-eri usoro, kamakwa teknụzụ teknụzụ na-arụ ọrụ nke ọma n'ichepụta oke okpomọkụ. Ọ ga-aga n'ihu na-enye nkwa a pụrụ ịdabere na ya maka nrụpụta ngwaọrụ dị elu n'ọhịa dị oke dị ka nzikọrịta ozi 5G, ngwa eletrọnịkị ike ọhụrụ, na mgbakọ quantum.

Nkwado Wafer na ịnyefe ọkụ na usoro MOCVD, gụnyere ọkụ na-acha anụnụ anụnụ na akwụkwọ ndụ akwụkwọ ndụ, UV LED na miri-UV LED wdg, nke a na-emegharị na akụrụngwa sitere na LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI na ndị ọzọ.

Teknụzụ na-eduga: Usoro CVD iji nweta (111) nghazi β-SiC, nha ọka 2-10μm, usoro dị oke.

Mgbanwe gburugburu ebe obibi dị oke egwu: nguzogide ikuku oxygen dị elu, nguzogide mbuze plasma, ash <5ppm.

Nlekọta okpomọkụ dị mma: conductivity thermal conductivity nke 300W / m·K, CTE zuru oke dakọtara graphite iji zere mgbawa nrụgide okpomọkụ.

Ọrụ usoro zuru ezu: Nkwado nhazi mkpụrụ, ntinye mkpuchi, nwale nnyefe otu nkwụsị.