SiC mkpuchi wafer susceptor

Semixlab na-enye susceptor wafer arụmọrụ dị elu. A na-etinyekarị ngwaahịa a na semiconductor CVD PVD akụrụngwa iji nye nkwado maka wafers ma gbochie mmebi ọ bụla na ọdịda mberede nke ikuku nitrogen kpatara.

SiC mkpuchi silicon carbide base (SiC mkpuchi Susceptor) na-ejikarị na semiconductor n'ihi njirimara ya dị ka nguzogide oke okpomọkụ, nguzogide corrosion, ịdị ọcha dị elu na obere mmetọ na wafers.

ngwa:

Ezubere nke ọma maka semiconductor CVD (1000°C - 1400°C) na PVD usoro okpomọkụ dị elu, ọ na-enye ikpo okwu nkwado kwụsiri ike maka wafers.

Isi atụmatụ:

Nkwụsi ike dị elu dị elu: Na-eguzogide oke okpomọkụ dị elu karịa 1400C, na-eme ka ọnọdụ wafer ziri ezi na-enweghị mgbagha ọ bụla.

Nchedo siri ike: guzogidere mmetụta nke ikuku nitrogen> 10 m / s na ọdịda mberede, na-enye nchebe kachasị maka wafer.

Ogologo oge dị ịrịba ama: mkpuchi SiC na-enye ike siri ike (> 2500 HV) na nguzogide corrosion, na-agbatị ndụ ọrụ.

Elu-ọcha dị elu: Ihu ike dị n'elu Ra <0.5 μm, na-ebelata ihe ize ndụ nke mmerụ ahụ.

Silicon base (silicon susceptor)

Ngwa: Kwesịrị ekwesị maka usoro okpomọkụ dị elu nke silicon wafers na ihe dị oke elu chọrọ maka ikpo ọkụ ọkụ (dịka uto epitaxial, <1200 ° C).

Isi atụmatụ:

● Igwe ọkụ ọkụ zuru oke: N'ikwekọ na ihe wafer (monocrystalline silicon), ọnụọgụ nke mgbasawanye thermal (CTE) dabara nke ọma (≈ 2.6 x 10⁻⁶ / K), na-ewepụ kpamkpam wafer warpage ma ọ bụ slips nke nrụgide okpomọkụ kpatara.

● nnyefe ngwa ngwa: A na-ebelata usoro nnyefe nke ngwaahịa ọkọlọtọ, dị ka izu 4-6 (ma e jiri ya tụnyere izu 8-12 maka ntọala SiC).

● Ịdị ọcha dị elu: Zute ụkpụrụ nke ihe silicon-ọkwa semiconductor.

● Ọdịmma dị n'elu: A na-egbu maramara nke ọma, nhụsianya elu Ra <0.2 μm.

SiC epitaxial oyi akwa uto graphite susceptor.

Ntugharị nbanye gas na njikwa ọkụ ọkụ na ọkụ ọkụ nke SiC epitaxial.