EN 
EN
DA
NL
FI
FR
DE
IT
JA
KO
NO
PL
PT
RO
RU
ES
SV
TL
ID
SK
UK
VI
TH
TR
FA
BE
LA
UZ
MOCVD SiC Ihe mkpuchi Graphite Susceptor
| Ebe nke Si Malite: | China |
| Ika aha: | Semixlab |
| Model Number: | MSCGS-01 |
| asambodo: | ISO9001 |
| Kacha nta Order ibu: | 1 set |
| Ahịa: | Kpọtụrụ maka ngụ aha ahaziri |
| Packaging Details: | Ngwungwu mbupụ ọkọlọtọ |
| Oge Mbuga ozi: | Ụbọchị 35-40 mgbe nkwenye iwu gasịrị |
| Ịkwụ Ụgwọ Okwu: | T / T |
| Tụkwasịnụ Ikike: | 1000 set/ọnwa |
Description
1. Ndụ gbatịkwuru 300%+
Nkà na ụzụ nke oyi akwa na-enyere ọnụ ọgụgụ nke usoro egwu ọkụ ọkụ karịa ugboro 5,000 (ihe na-erughị ugboro 1,500 maka ngwaahịa omenala).
Okpomọkụ na-arụ ọrụ na-aga n'ihu nwere ike iru 1650 Celsius, na mkpuchi na-egosi enweghị mgbawa ma ọ bụ peeling.
2. nkwa mmetọ efu
Ịdị ọcha nke mkpuchi SiC bụ ọkwa 6N (mkpokọta nke adịghị ọcha nke ọla <0.5ppm).
Gafere ule ntọhapụ urughuru ọkọlọtọ SEMI (ịdị ọcha klaasị 10).
3. Thermal ubi uniformity kwalite
Ọdịiche okpomọkụ dị n'elu ala bụ ihe na-erughị ± 2 ° C (data atụnyere maka nkọwa Φ300mm).
Na-akwado ikpo ọkụ ngwa ngwa (20 Celsius C / s) na-enweghị nrụrụ okpomọkụ.
4. Magburu onwe corrosion eguzogide
Na-eguzogide corrosion site na gas dị ka H2, NH3, na TMAl, nwere ndụ ọrụ karịrị ọnwa 18.
Ọnụego mgbanwe nke ịdị nro dị n'elu bụ ihe na-erughị 5% (nwalere mgbe usoro usoro 100 gasịrị).
5. Dakọtara na mainstream ụdị n'ụwa nile
Na-akwado nhazi nhazi na dayameta sitere na 50 ruo 500mm.
6. Nkwalite ọnụ ahịa usoro ndụ zuru oke
Agbatịla okirikiri mmezi ahụ ugboro atọ karịa nke ngwaahịa mgbe niile.
Ọnụego mkpụrụ nke wafers epitaxial abawanyela site na 2-3%.
Ike Companylọ ọrụ
Semixlab Technology Co., Ltd nwere 2 R&D emmepe, 2 mmepụta bases, 12 mmepụta ahịrị, 150+ ọrụ, na R&D itinye ego na akaụntụ maka ihe karịrị 30%. A na-ejikarị nhazi ngwaahịa anyị na LED, IC integrated circuit, ọgbọ nke atọ semiconductor, fotovoltaic na ụlọ ọrụ ndị ọzọ. Semixlab nwere R&D siri ike, mmepụta na ike nnwale na nkwenye. N'otu oge ahụ, anyị na-anọgide na-emeziwanye nkà na ụzụ na akụrụngwa anyị site na ntinye ego nke iri nde nde kwa afọ.
nkọwa
Igodo arụmọrụ paramita
Usoro ihe omume
Ihe ndabere bụ SGL isostatic graphite
mkpuchi mkpuchi ọkpụrụkpụ: 80-200μm (nwere ike ịhazi)
Ịdị ọcha nke mkpuchi bụ ≥99.9999%
Njupụta: 1.85-1.90 g/cm³
Nrụgide okpomọkụ: 125 W/m·K (RT)
Ike mgbanwe ≥45 MPa
Okpomọkụ na-arụ ọrụ ≤1800°C (ikuku ikuku)
Usoro mmesi obi ike
Nchọpụta usoro zuru oke: Ndekọ data zuru oke site na mkpụrụ graphite ruo usoro mkpuchi.
Nchọpụta nkenke: nyocha mkpuchi SEM/EDS, nchọpụta leak nke helium mass spectrometry, nnwale ujo okpomọkụ dị elu.
| Njirimara anụ ahụ bụ isi nke mkpuchi CVD SiC | |
| Property | Picalkpụrụ Omume |
| Nhazi Crystal | FCC β oge polycrystalline, tumadi (111) nghazi |
| njupụta | 3.21 g / cm³ |
| Ekweghị ekwe | 2500 Vickers siri ike (ibu 500g) |
| ọka SiZe | 2 ~ 10μm |
| Chemical Ọcha | 99.99995% |
| Ike okpomọkụ | 640 nk-1·K-1 |
| Sublimation okpomọkụ | 2700 ℃ |
| Ike ike | 415 MPa RT 4-isi |
| Modul nke Young | 430 Gpa 4pt ekwe, 1300 ℃ |
| Omume Omume nke Igwe | 300W·m-1·K-1 |
| Mgbasa ọkụ (CTE) | 4.5 × 10-6K-1 |
Njirimara anụ ahụ bụ isi nke mkpuchi CVD SiC:
ngwa
Ngwa ndapụta ma ọ bụ akụrụngwa: Aixtron Epi akụrụngwa
Isi ngwa ndapụta
● LED mgbawa n'ichepụta: GaN-acha anụnụ anụnụ / ọcha LED epitaxial uto.
● Semiconductors ike: ngwaọrụ SiC/GaN ike (MOSFET, HEMT).
● Ngwaọrụ ugboro redio 5G: igwe mgbawa igwe redio dị elu.
● Laser diode: VCSEL, akụkụ-emitting laser epitaxial usoro.
● Nkwakọ ngwaahịa dị elu: Ndokwa nke ihe nkiri dị mkpa nke semiconductor dị elu.
Nchịkọta nke yinye ụlọ ọrụ semiconductor chip epitaxy:
anyị Ọrụ
Ụlọ ahịa ngwaahịa Semixlab
